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AT25PE20 датащи(PDF) 35 Page - Dialog Semiconductor

номер детали AT25PE20
подробное описание детали  2-Mbit DataFlash-L Page Erase Serial Flash Memory
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AT25PE20 датащи(HTML) 35 Page - Dialog Semiconductor

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AT25PE20
DS-25PE20–139C–8/2018
14.
Operation Mode Summary
The commands described previously can be grouped into four different categories to better describe which commands
can be executed at what times.
Group A commands consist of:
1.
Main Memory Page Read
2.
Continuous Array Read (SPI)
3.
Read Sector Protection Register
4.
Read Security Register
5.
Buffer Read
Group B commands consist of:
1.
Page Erase
2.
Block Erase
3.
Sector Erase
4.
Chip Erase
5.
Main Memory Page to the Buffer Transfer
6.
Main Memory Page to the Buffer Compare
7.
Buffer to Main Memory Page Program with Built-In Erase
8.
Buffer to Main Memory Page Program without Built-In Erase
9.
Main Memory Page Program through the Buffer with Built-In Erase
10. Main Memory Byte/Page Program through Buffer without Built-In Erase
11. Auto Page Rewrite
12. Read-Modify-Write
Group C commands consist of:
1.
Buffer Write
2.
Status Register Read
3.
Manufacturer and Device ID Read
Group D commands consist of:
1.
Erase Sector Protection Register
2.
Program Sector Protection Register
3.
Buffer and Page Size Configuration
If a Group A command is in progress (not fully completed), then another command in Group A, B, C, or D should not be
started. However, during the internally self-timed portion of Group B commands, any command in Group C can be
executed. The Group B commands using the Buffer should use Group C commands. Finally, during the internally
self-timed portion of a Group D command, only the Status Register Read command should be executed.



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