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AT25DF512C датащи(PDF) 11 Page - Dialog Semiconductor |
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AT25DF512C датащи(HTML) 11 Page - Dialog Semiconductor |
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11 / 43 page ![]() 10 AT25DF512C DS-25DF512C–030E–2/2017 protected state (see “Block Protection” on page 13), then the Byte/Page Program command will not be executed, and the device will return to the idle state once the CS pin has been deasserted. The WEL bit in the Status Register will be reset back to the logical “0” state if the program cycle aborts due to an incomplete address being sent, an incomplete byte of data being sent, the CS pin being deasserted on uneven byte boundaries, or because the memory location to be programmed is protected. While the device is programming, the Status Register can be read and will indicate that the device is busy. For faster throughput, it is recommended that the Status Register be polled rather than waiting the tBP or tPP time to determine if the data bytes have finished programming. At some point before the program cycle completes, the WEL bit in the Status Register will be reset back to the logical “0” state. The device also incorporates an intelligent programming algorithm that can detect when a byte location fails to program properly. If a programming error arises, it will be indicated by the EPE bit in the Status Register. Figure 8-1. Byte Program Figure 8-2. Page Program 8.2 Page Erase Page Erase for 512Kbit, 256Pages [eight (8) page address bits, PA<7:0>] of 256Bytes each. The Page Erase command can be used to individually erase any page in the main memory array. The Main Memory Byte/Page Program command can be utilized at a later time. To perform a Page Erase with the standard page size (256 bytes), an opcode of 81h must be clocked into the device followed by three address bytes comprised of: Byte 0: 81h the page erase command code Byte 1: XXXX XXXX; which is eight (8) dummy bits Byte 2: PA<7:0>; which is eight (8) page address bits PA<7:0> Byte 3: XXXX XXXX; which is eight (8) dummy bits SCK CS SI SO MSB MSB 23 1 0 00000010 67 5 410 11 9 812 39 37 38 33 36 35 34 31 32 29 30 OPCODE HIGH-IMPEDANCE AAAA AAA A A MSB DDDDDDD D ADDRESS BITS A23-A0 DATA IN SCK CS SI SO MSB MSB 23 1 0 00000010 67 5 49 839 37 38 33 36 35 34 31 32 29 30 OPCODE HIGH-IMPEDANCE AA AAA A MSB DDDDDDD D ADDRESS BITS A23-A0 DATA IN BYTE 1 MSB DDDDDDD D DATA IN BYTE n |
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