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HMC1082CHIP датащи(PDF) 5 Page - Analog Devices |
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HMC1082CHIP датащи(HTML) 5 Page - Analog Devices |
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5 / 15 page ![]() Data Sheet HMC1082CHIP Rev. B | Page 5 of 15 ABSOLUTE MAXIMUM RATINGS Table 4. Parameter Rating Drain Bias Voltage (VDD) 5.5 V dc Radio Frequency (RF) Input Power (RFIN) 20 dBm Continuous Power Dissipation (PDISS), T = 85°C (Derate 20.4 mW/°C Above 85°C) 1.84 W Channel Temperature 175°C Storage Temperature Range −65°C to +150°C Operating Temperature Range −55°C to +85°C Junction Temperature to Maintain 1,000,000 Hour Mean Time to Failure (MTTF) 175°C Nominal Junction Temperature (T = 85°C, VDD = 5 V, IDQ = 220 mA) 138.8°C ESD Sensitivity Human Body Model (HBM) Class 1A (passed 250 V) Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. THERMAL RESISTANCE θJC is the junction to case thermal resistance, channel to bottom of die. Table 5. Thermal Resistance Package Type θJC Unit C-6-13 48.9 °C/W ESD CAUTION |
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