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HMC1082CHIP датащи(PDF) 5 Page - Analog Devices

номер детали HMC1082CHIP
подробное описание детали  5.5 GHz to 18 GHz, GaAs, pHEMT, MMIC, Medium Power Amplifier
PDF  15 Pages
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производитель  AD [Analog Devices]
домашняя страница  http://www.analog.com
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HMC1082CHIP датащи(HTML) 5 Page - Analog Devices

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Data Sheet
HMC1082CHIP
Rev. B | Page 5 of 15
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Rating
Drain Bias Voltage (VDD)
5.5 V dc
Radio Frequency (RF) Input Power (RFIN)
20 dBm
Continuous Power Dissipation (PDISS), T =
85°C (Derate 20.4 mW/°C Above 85°C)
1.84 W
Channel Temperature
175°C
Storage Temperature Range
−65°C to +150°C
Operating Temperature Range
−55°C to +85°C
Junction Temperature to Maintain
1,000,000 Hour Mean Time to Failure
(MTTF)
175°C
Nominal Junction Temperature (T =
85°C, VDD = 5 V, IDQ = 220 mA)
138.8°C
ESD Sensitivity
Human Body Model (HBM)
Class 1A
(passed 250 V)
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the
operational section of this specification is not implied.
Operation beyond the maximum operating conditions for
extended periods may affect product reliability.
THERMAL RESISTANCE
θJC is the junction to case thermal resistance, channel to bottom
of die.
Table 5. Thermal Resistance
Package Type
θJC
Unit
C-6-13
48.9
°C/W
ESD CAUTION



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