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PBLS2001D датащи(PDF) 7 Page - NXP Semiconductors |
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PBLS2001D датащи(HTML) 7 Page - NXP Semiconductors |
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7 / 16 page ![]() PBLS2001D_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 5 July 2005 7 of 16 Philips Semiconductors PBLS2001D 20 V PNP BISS loadswitch [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02. TR2; NPN resistor-equipped transistor ICBO collector-base cut-off current VCB =50V; IE = 0 A - - 100 nA ICEO collector-emitter cut-off current VCE =30V; IB =0A - - 1 µA VCE =30V; IB =0A; Tj = 150 °C -- 50 µA IEBO emitter-base cut-off current VEB =5V; IC =0A - - 2 mA hFE DC current gain VCE =5V; IC =20mA 30 - - VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - 150 mV VI(off) off-state input voltage VCE =5V; IC = 1 mA - 1.2 0.5 V VI(on) on-state input voltage VCE = 0.3 V; IC = 20 mA 2 1.6 - V R1 bias resistor 1 (input) 1.54 2.2 2.86 k Ω R2/R1 bias resistor ratio 0.8 1 1.2 Cc collector capacitance VCB =10V; IE =ie =0A; f=1MHz - - 2.5 pF Table 7: Characteristics …continued Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit |
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