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M69AW024BE60ZB8F датащи(PDF) 16 Page - STMicroelectronics

номер детали M69AW024BE60ZB8F
подробное описание детали  16 Mbit (1M x16) 3V Asynchronous PSRAM
PDF  25 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M69AW024BE60ZB8F датащи(HTML) 16 Page - STMicroelectronics

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Table 8. Write Mode AC Characteristics
Note: 1. The maximum value of this timing is applicable if E1 is kept Low without any address change. If needed by system operation, please
contact your local ST representative for relaxation of the 1000ns limitation.
2. Minimum value must be equal to or greater than the sum of the write pulse (
tELEH, tWLBH or tBLBH and the write recovery time
tWHAV.
3. Write pulse is defined from the falling edge of E1, W, or LB/UB, whichever occurs last.
4. Applicable to Byte Masking only. Byte Masking set-up time is defined from the falling edge of E1 or W whichever occurs last.
5. Applicable to Byte Masking only. Byte Masking hold time is defined from the rising edge of E1 or W whichever occurs first.
6. Write recovery is defined from the rising edge of E1, W, or LB/UB, whichever occurs first.
7. If G is Low after tGHEL(min), the read cycle is initiated. In other words, G must be brought High within tGHEL (min) after E1 is brought
Low. Once the read cycle is initiated, new write pulse should be input after tAVAX or tELEH minimum value.
8. If G is Low after new address input, the read cycle is initiated. In other words, G must be brought High at the same time or before
new address valid. Once the read cycle is initiated, new write pulse should be input after tAVAX or tELEH minimum value.
Symbol
Alt.
Parameter
M69AW024BE
Unit
–60
Min
Max
tAVAX,
tELAX
(1,2)
tWC
Chip Enable Write Cycle Time
70
1000
ns
tAVEL, tAVBL,
tAVWL
(2)
tAS
Address Set-up Time to Chip Enable Low
0
ns
tELEH
(3)
tCW
Chip Enable Write Pulse Width
45
ns
tWLBH,
tWLWH
(3)
tWP
Write Enable Write Pulse Width
45
ns
tBLWH,
tBLBH
(3)
tBW
LB, UB Pulse (Write Operation)
45
ns
tBHWL
(4)
tBS
LB, UB Byte Masking Set-up Time
–5
ns
tWHBL
(5)
tBH
LB, UB Hold Time
–5
ns
tWHAX, tEHAX,
tBHAX
(6)
tWR
Write Recovery Time
0
ns
tEHEL
tCP
Chip Enable High Pulse
10
ns
tWHWL
tWHP
Write Enable High Pulse
10
1000
ns
tBHBL
tBHP
LB, UB High Pulse
10
1000
ns
tDVEH, tDVWH,
tDVBH
tDS
Data Set-up Time
15
ns
tEHDZ, tWHDZ,
tBHDZ, tGHDZ
tDH
Data Hold Time
0
ns
tGHEL
(7)
tOHCL
Output Enable High to Chip Enable Low Set-up Time
–5
ns
tGHAV
(8)
tOES
Output Enable Set-up Time
0
ns
tBLBH2
tBWO
LB, UB Low to LB, UB High for Page Access
30
ns



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