IXFN100N25 datasheet(1/2 Pages) IXYS

номер детали	IXFN100N25

подробное описание детали	N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low

PDF	2 Pages

Scroll/Zoom	100%

производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

Logo

1 / 2 page

2 - 2

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

g

fs

V

DS

= 10 V; I

D = 0.5 • ID25

Note 1

40

70

S

C

iss

9100

pF

C

oss

V

GS = 0 V, VDS = 25 V, f = 1 MHz

1800

pF

C

rss

600

pF

t

d(on)

42

ns

t

r

V

GS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

55

ns

t

d(off)

R

G = 1 W (External),

110

ns

t

f

40

ns

Q

g(on)

300

nC

Q

gs

V

GS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

57

nC

Q

gd

160

nC

R

thJC

0.22

K/W

R

thCK

0.05

K/W

Source-Drain Diode

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Symbol

Test Conditions

min.

typ.

max.

I

S

V

GS = 0 V

100

A

I

SM

Repetitive;

400

A

pulse width limited by T

JM

V

SD

I

F = IS, VGS = 0 V, Note 1

1.5

V

t

rr

250

ns

Q

RM

1.4

mC

I

RM

10

A

I

F = 50A,-di/dt = 100 A/ms, VR = 100 V

Note: 1. Pulse test, t

£ 300 ms, duty cycle d £ 2 %

IXFN 100N25

M4 screws (4x) supplied

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

31.50

31.88

1.240

1.255

B

7.80

8.20

0.307

0.323

C

4.09

4.29

0.161

0.169

D

4.09

4.29

0.161

0.169

E

4.09

4.29

0.161

0.169

F

14.91

15.11

0.587

0.595

G

30.12

30.30

1.186

1.193

H

38.00

38.23

1.496

1.505

J

11.68

12.22

0.460

0.481

K

8.92

9.60

0.351

0.378

L

0.76

0.84

0.030

0.033

M

12.60

12.85

0.496

0.506

N

25.15

25.42

0.990

1.001

O

1.98

2.13

0.078

0.084

P

4.95

5.97

0.195

0.235

Q

26.54

26.90

1.045

1.059

R

3.94

4.42

0.155

0.174

S

4.72

4.85

0.186

0.191

T

24.59

25.07

0.968

0.987

U

-0.05

0.1

-0.002

0.004

miniBLOC, SOT-227 B

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

Аналогичный номер детали - IXFN100N25

производитель	номер детали	датащи	подробное описание детали
IXYS Corporation	IXFN100N20	112Kb / 4P	HiPerFET Power MOSFETs
Inchange Semiconductor ...	IXFN100N20	536Kb / 3P	N-Channel MOSFET

More results

Аналогичное описание - IXFN100N25

производитель	номер детали	датащи	подробное описание детали
Siemens Semiconductor G...	BUZ100S	126Kb / 8P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)
	BUZ102S	123Kb / 8P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)
	BUZ110S	122Kb / 8P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)
	BUZ111S	121Kb / 8P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)
IXYS Corporation	IXFK38N80Q2	605Kb / 5P	N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R
Infineon Technologies A...	SPP08P06P	843Kb / 10P	P-Channel Enhancement mode Avalanche rated dv/dt rated Rev 1.5 2009-04-14
IXYS Corporation	IXTH28N50Q	177Kb / 4P	N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
	IXTQ24N55Q	517Kb / 2P	N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
	IXFH36N55Q	171Kb / 4P	N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
	IXFH80N08	93Kb / 2P	N-Channel Enhancement Mode Avalanche Rated, High dv/dt

More results

IXFN100N25 датащи(PDF) 1 Page - IXYS Corporation

IXFN100N25 датащи(HTML) 1 Page - IXYS Corporation

Аналогичный номер детали - IXFN100N25

Аналогичное описание - IXFN100N25

Html Pages

1 2

датащи скачать

ссылки URL