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S506TYR датащи(PDF) 2 Page - Vishay Siliconix

номер детали S506TYR
подробное описание детали  MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage
PDF  5 Pages
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производитель  VISHAY [Vishay Siliconix]
домашняя страница  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

S506TYR датащи(HTML) 2 Page - Vishay Siliconix

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Document Number 85095
Rev. 1, 21-Oct-02
www.vishay.com
2
VISHAY
S506TY/S506TYR/S506TYRW
Vishay Semiconductors
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Maximum Thermal Resistance
on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 56 kΩ, ID = IDSO, f = 1 MHz
Part
Marking
Package
S506TY
Y06
SOT143
S506TYR
Y6R
SOT143R
S506TYRW
WY6
SOT343R
Parameter
Test condition
Symbol
Value
Unit
Drain - source voltage
VDS
8
V
Drain current
ID
30
mA
Gate 1/Gate 2 - source peak
current
± I
G1/G2SM
10
mA
Gate 1 - source voltage
+ VG1SM
6
V
- VG1SM
1.5
V
Gate 2 - source voltage
± V
G2SM
6
V
Total power dissipation
Tamb ≤ 60 °C
Ptot
200
mW
Channel temperature
TCh
150
°C
Storage temperature range
Tstg
- 55 to + 150
°C
Parameter
Test condition
Symbol
Value
Unit
Channel ambient
1)
RthChA
450
K/W
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Drain - source breakdown voltage
ID = 10 µA, VG1S = VG2S = 0
V(BR)DSS
12
V
Gate 1 - source breakdown voltage + IG1S = 10 mA, VG2S = VDS = 0
+ V(BR)G1SS
7
10
V
Gate 2 - source breakdown voltage
± IG2S = 10 mA, VG1S = VDS = 0
± V(BR)G2SS
7
10
V
Gate 1 - source leakage current
+ VG1S = 5 V, VG2S = VDS = 0
+ IG1SS
20
nA
Gate 2 - source leakage current
± VG2S = 5 V, VG1S = VDS = 0
± IG2SS
20
nA
Drain - source operating current
VDS = VRG1 = 5 V, VG2S = 4 V, RG1
= 56 k
IDSO
8
12
17
mA
Gate 1 - source cut-off voltage
VDS = 5 V, VG2S = 4, ID = 20 µA
VG1S(OFF)
0.3
1.0
V
Gate 2 - source cut-off voltage
VDS = VRG1 = 5 V, RG1 = 56 kΩ, ID
= 20 µA
VG2S(OFF)
0.3
1.0
1.2
V
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward transadmittance
|y21s|
23
28
33
mS
Gate 1 input capacitance
Cissg1
2.5
3.0
pF
Feedback capacitance
Crss
20
fF
Output capacitance
Coss
0.9
pF



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