IFN147 datasheet(1/1 Pages) INTERFET

номер детали	IFN147

подробное описание детали	N-Channel Silicon Junction Field-Effect Transistor

PDF	1 Pages

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производитель	INTERFET [InterFET Corporation]

домашняя страница	http://www.interfet.com

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1 / 1 page

D-6

01/99

IFN147

N-Channel Silicon Junction Field-Effect Transistor

¥ Low-Noise Audio Amplifier

¥ Equivalent to Japanese 2SK147

Absolute maximum ratings at TA = 25¡C

Reverse Gate Source & Reverse Gate Drain Voltage

– 40 V

Continuous Forward Gate Current

10 mA

Continuous Device Power Dissipation

300 mW

Power Derating

2.4 mW/°C

TOÐ18 Package

Dimensions in Inches (mm)

Pin Configuration

1 Source, 2 Gate & Case, 3 Drain

At 25°C free air temperature:

IFN147

Process NJ450

Static Electrical Characteristics

Min

Typ

Max

Unit

Test Conditions

Gate Source Breakdown Voltage

V(BR)GSS

– 40

V

IG = – 1 µA, VDS = ØV

Gate Reverse Current

IGSS

– 1

nA

VGS = – 30V, VDS = ØV

– 1

µA

VGS = – 30V, VDS = ØV

TA = 150°C

Gate Source Cutoff Voltage

VGS(OFF)

– 0.3

– 1.2

V

VDS = 10V, ID = 1 µA

Drain Saturation Current (Pulsed)

IDSS

530

mA

VDS = 10V, VGS = ØV

Dynamic Electrical Characteristics

Common Source

gfs

30

40

mS

VDS = 10V, VGS = ØV

f = 1 kHz

Forward Transconductance

IDSS = 5 mA

Common Source Input Capacitance

Ciss

75

pF

VDS = 10V, VGS = ØV

f = 1 kHz

Common Source Reverse

Crss

15

pF

VDS = 10V, ID = Ø

f = 1 Hz

Transfer Capacitance

Noise Figure

NF

1dB

VDS = 10V, ID = 5 mA

f = 1 kHz

10

dB

RG = 100Ω

f = 100 Hz

1000 N. Shiloh Road, Garland, TX 75042

(972) 487-1287 FAX (972) 276-3375

www.interfet.com

Databook.fxp

1/13/99 2:09 PM

Page D-6

Аналогичный номер детали - IFN147

производитель	номер детали	датащи	подробное описание детали
InterFET Corporation	IFN146	89Kb / 1P	Dual N-Channel Silicon Junction Field-Effect Transistor

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