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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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WSF4042 датащи(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSF4042 датащи(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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2 / 10 page  Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 40 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.034 --- V/℃ VGS=10V , ID=1 0A --- 14 2 1 RDS(ON) Static Drain-Source On-Resistance 2 VGS=4.5V , ID= 5A --- 18 25 m Ω VGS(th) Gate Threshold Voltage 1. 5 2.0 2.5 V △ VGS(th) VGS(th) Temperature Coefficient VGS=VDS , ID =250uA --- -4.56 --- mV/℃ VDS=32V , VGS=0V , TJ=25℃ --- --- 1 IDSS Drain-Source Leakage Current VDS=32V , VGS=0V , TJ=55℃ --- --- 5 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ± 100 nA gfs Forward Transconductance VDS=5V , ID=12A --- 8 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.6 5.2 Ω Qg Total Gate Charge (4.5V) --- 7.5 --- Qgs Gate-Source Charge --- 3.24 --- Qgd Gate-Drain Charge VDS=20V , VGS=4.5V , ID=12A --- 2.75 --- nC Td(on) Turn-On Delay Time --- 7.8 --- Tr Rise Time --- 6.9 --- Td(off) Turn-Off Delay Time --- 22.4 --- Tf Fall Time VDD=20V , VGS=10V , RG=3.3Ω ID=1A --- 4.8 --- ns Ciss Input Capacitance --- 815 --- Coss Output Capacitance --- 95 --- Crss Reverse Transfer Capacitance VDS=15V , VGS=0V , f=1MHz --- 60 --- pF Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 --- --- 10 A ISM Pulsed Source Current 2,6 VG=VD=0V , Force Current --- --- 30 A VSD Diode Forward Voltage 2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=17.8A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics WSF4042 N-Ch and P-Channel MOSFET Page 2 www.winsok.tw Rev1.0 May.2020 |
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