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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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ACE3415B датащи(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE3415B датащи(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 6 page  ACE3415B P-Channel Enhancement Mode Field Effect Transistor VER 1.2 1 Description The ACE3415B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Features ⚫ VDS=-20V, ID=-4.3A ⚫ RDS(ON)<55mΩ @ VGS=-4.5V ⚫ RDS(ON)<63mΩ @ VGS=-2.5V ⚫ RDS(ON)<73mΩ @ VGS=-1.8V ⚫ ESD Protected: 3000V HBM Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Drain Current (Continuous) TA=25 OC ID -4.3 A TA=70 OC -3.4 Drain Current (Pulse) IDM -32 A Power Dissipation TA=25 OC PD 1 W Operating and Storage Temperature Range TJ,TSTG -55 to 150 O C Packaging Type TSOT-23-3 Pin Configuration TSOT-23-3 Description 1 Gate 2 Source 3 Drain |
Аналогичный номер детали - ACE3415B |
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Аналогичное описание - ACE3415B |
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