NIF9N05CL datasheet(1/6 Pages) ONSEMI

номер детали	NIF9N05CL

подробное описание детали	PROTECTED POWER MOSFET

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производитель	ONSEMI [ON Semiconductor]

домашняя страница	http://www.onsemi.com

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July, 2004 − Rev. 3

1

Publication Order Number:

NIF9N05CL/D

NIF9N05CL

Protected Power MOSFET

2.6 A, 52 V, N−Channel, Logic Level,

Clamped MOSFET w/ ESD Protection

in a SOT−223 Package

Benefits

• High Energy Capability for Inductive Loads

• Low Switching Noise Generation

Features

• Diode Clamp Between Gate and Source

• ESD Protection − HBM 5000 V

• Active Over−Voltage Gate to Drain Clamp

• Scalable to Lower or Higher R

DS(on)

• Internal Series Gate Resistance

Applications

• Automotive and Industrial Markets:

Solenoid Drivers, Lamp Drivers, Small Motor Drivers

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage Internally Clamped

VDSS

52−59

V

Gate−to−Source Voltage − Continuous

VGS

±15

V

Drain Current

− Continuous @ TA = 25°C

− Single Pulse (tp = 10 ms) (Note 1)

ID

IDM

2.6

10

A

Total Power Dissipation @ TA = 25°C (Note 1)

PD

1.69

W

Operating and Storage Temperature Range

TJ, Tstg

−55 to

150

°C

Single Pulse Drain−to−Source

Avalanche Energy (VDD = 50 V, ID(pk) = 1.17 A,

VGS = 10 V, L = 160 mH, RG = 25 W)

EAS

110

mJ

Thermal Resistance

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

RqJA

74

169

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8

″ from Case for 10 s

TL

260

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. When surface mounted to an FR4 board using 1

″ pad size, (Cu area 1.127 in2)

2. When surface mounted to an FR4 board using minimum recommended pad

size, (Cu area 0.412 in2)

Device

Package

Shipping†

ORDERING INFORMATION

NIF9N05CLT1

SOT−223

1000/Tape & Reel

MPWR

Drain

(Pins 2, 4)

Source

(Pin 3)

Gate

(Pin 1)

RG

Overvoltage

Protection

ESD Protection

http://onsemi.com

SOT−223

CASE 318E

STYLE 3

DRAIN

GATE

DRAIN

SOURCE

(Top View)

MARKING DIAGRAM

F9N05

= Specific Device Code

A

= Assembly Location

WW

= Work Week

1

2

3

4

VDSS

(Clamped)

RDS(ON) TYP

ID MAX

52 V

107 m

Ω

2.6 A

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

NIF9N05CLT3

SOT−223

4000/Tape & Reel

Аналогичный номер детали - NIF9N05CL

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	NIF9N05CL	72Kb / 6P	Protected Power MOSFET May, 2006 ??Rev. 5
	NIF9N05CL	195Kb / 8P	Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package November, 2011 - Rev. 6
	NIF9N05CLT1	72Kb / 6P	Protected Power MOSFET May, 2006 ??Rev. 5
	NIF9N05CLT1	195Kb / 8P	Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package November, 2011 - Rev. 6
	NIF9N05CLT1G	72Kb / 6P	Protected Power MOSFET May, 2006 ??Rev. 5

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