ES2DAF-T

– ES2JAF-T

Taiwan Semiconductor

2

Version: B2103

THERMAL PERFORMANCE

PARAMETER

SYMBOL

TYP

UNIT

Junction-to-lead thermal resistance

15

°C/W

Junction-to-ambient thermal resistance

89

°C/W

Junction-to-case thermal resistance

22

°C/W

Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board)

PARAMETER

CONDITIONS

SYMBOL

TYP

MAX

UNIT

Forward voltage

(1)

ES2DAF-T

0.83

-

V

0.91

0.95

V

0.68

-

V

0.78

0.89

V

ES2GAF-T

1.00

-

V

1.13

1.25

V

0.80

-

V

0.94

1.14

V

ES2JAF-T

1.22

-

V

1.44

1.70

V

0.89

-

V

1.09

1.50

V

(2)

-

5

µA

-

200

µA

Reverse recovery time

-

35

ns

Junction capacitance

ES2DAF-T

27

-

pF

ES2GAF-T

21

-

pF

ES2JAF-T

12

-

pF

Notes:

1.

Pulse test with PW = 0.3ms

2.

Pulse test with PW = 30ms

ORDERING INFORMATION

ORDERING CODE

PACKAGE

PACKING

ES2xAF-T

SMAF

7,500 / Tape & Reel

Notes:

1.

“x” defines voltage from 200V (ES2DAF-T) to 600V (ES2JAF-T)