TUAS8D

– TUAS8M

Taiwan Semiconductor

2

Version: B2103

THERMAL PERFORMANCE

PARAMETER

SYMBOL

TYP

UNIT

Junction-to-lead thermal resistance

4

°C/W

Junction-to-ambient thermal resistance

38

°C/W

Junction-to-case thermal resistance

8

°C/W

Thermal Performance Note: Units mounted on PCB (16mm x 16mm Cu pad test board)

PARAMETER

CONDITIONS

SYMBOL

TYP

MAX

UNIT

Forward voltage

(1)

TUAS8D

TUAS8G

TUAS8J

0.90

-

V

0.96

1.10

V

0.78

-

V

0.87

1.01

V

TUAS8K

TUAS8M

0.90

-

V

0.97

1.10

V

0.78

-

V

0.87

1.01

V

(2)

-

5

µA

-

60

µA

Junction capacitance

TUAS8D

TUAS8G

TUAS8J

62

-

pF

TUAS8K

TUAS8M

54

-

pF

Notes:

1.

Pulse test with PW = 0.3ms

2.

Pulse test with PW = 30ms

ORDERING INFORMATION

PACKAGE

PACKING

TUAS8x

TO-277A (SMPC4.6U)

6,000 / Tape & Reel

Notes:

1.

“x” defines voltage from 200V(TUAS8D) to 1000V(TUAS8M)