ACE1H004B datasheet(1/11 Pages) ACE

номер детали	ACE1H004B

подробное описание детали	40V Complementary Enhancement Mode MOSFET

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производитель	ACE [ACE Technology Co., LTD.]

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ACE1H004B

40V Complementary Enhancement Mode MOSFET

VER 1.2

1

Description



used in inverter



other applications

Features

N-Channel



VDS= 40V



ID=7.7A



RDS(ON)



VGS= 10V, TYP 15

mΩ



VGS= 4.5V, TYP 18.6

mΩ

P-Channel



VDS= -40V



ID=-5.7A



RDS(ON)



VGS= -10V, TYP 36

mΩ



VGS= -4.5V, TYP 51

mΩ

Absolute Maximum Ratings

Parameter

Symbol

N-Ratings

P-Ratings

Unit

Drain-Source Voltage

VDSS

40

-40

V

Gate-Source Voltage

VGSS

±20

V

Drain Current

(Continuous) *AC

TA=25°C

ID

7.7

-5.7

A

TA=70°C

6.1

-4.6

Drain Current (Pulse) *B

IDM

20

-20

A

Power Dissipation

TA=25°C

PD

2

W

Operating Temperature/ Storage Temperature

TJ/TSTG

-55~150

°C

Note :

a.The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air

environment with TA=25°C. The value in any given application depends on the user's specific board design.

b. Repetitive rating, pulse width limited by junction temperature.

c. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating

Thermal Resistance Ratings

Parameter

Symbol

Maximum

Units

Maximum Junction-to-Ambient

Steady State

R

thJA

62.5

°C/W

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Аналогичное описание - ACE1H004B

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