2SD968 datasheet(1/2 Pages) PANASONIC

номер детали	2SD968

подробное описание детали	Silicon NPN epitaxial planer type(For low-frequency driver amplification)

PDF	2 Pages

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производитель	PANASONIC [Panasonic Semiconductor]

домашняя страница	http://www.panasonic.com/industrial/

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1

Transistor

2SD968, 2SD968A

Silicon NPN epitaxial planer type

For low-frequency driver amplification

Complementary to 2SB789 and 2SB789A

s Features

q

High collector to emitter voltage VCEO.

q

Large collector power dissipation PC.

q

Mini Power type package, allowing downsizing of the equipment

and automatic insertion through the tape packing and the maga-

zine packing.

s Absolute Maximum Ratings (Ta=25˚C)

Unit: mm

Parameter

Collector to

base voltage

Collector to

emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Base

2:Collector

EIAJ:SC–62

3:Emitter

Mini Power Type Package

4.5

±0.1

3.0

±0.15

1.5

±0.1

0.4

±0.08

0.5

±0.08

1.5

±0.1

0.4

±0.04

1.6

±0.2

45

°

marking

321

Symbol

VCBO

VCEO

VEBO

ICP

IC

PC

*

Tj

Tstg

Ratings

100

120

100

120

5

1

0.5

1

150

–55 ~ +150

Unit

V

A

W

˚C

2SD968

2SD968A

2SD968

2SD968A

s Electrical Characteristics (Ta=25˚C)

Parameter

Collector to emitter

voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

VCEO

VEBO

hFE1

*1

hFE2

VCE(sat)

VBE(sat)

fT

Cob

Conditions

IC = 100µA, IB = 0

IE = 10µA, IC = 0

VCE = 10V, IC = 150mA

*2

VCE = 5V, IC = 500mA

*2

IC = 500mA, IB = 50mA

*2

IC = 500mA, IB = 50mA

*2

VCB = 10V, IE = –50mA, f = 200MHz

VCB = 10V, IE = 0, f = 1MHz

min

100

120

5

90

50

typ

100

0.2

0.85

120

11

max

220

0.6

1.2

20

Unit

V

MHz

pF

*1h

FE1 Rank classification

Rank

Q

R

hFE1

90 ~ 155

130 ~ 220

2SD968

WQ

WR

2SD968A

VQ

VR

Marking symbol :

W(2SD968)

V(2SD968A)

Marking

Symbol

* Printed circuit board: Copper foil area of 1cm2 or more, and the board

thickness of 1.7mm for the collector portion

2SD968

2SD968A

*2 Pulse measurement

Аналогичный номер детали - 2SD968

производитель	номер детали	датащи	подробное описание детали
Panasonic Semiconductor	2SD968	38Kb / 2P	Silicon PNP epitaxial planer type(For low-frequency driver amplification)
Guangdong Kexin Industr...	2SD968	52Kb / 2P	Silicon NPN epitaxial planer type
Panasonic Semiconductor	2SD968A	38Kb / 2P	Silicon PNP epitaxial planer type(For low-frequency driver amplification)
Panasonic Semiconductor	2SD968A	72Kb / 3P	For Low-Frequency Driver Amplification
Guangdong Kexin Industr...	2SD968A	52Kb / 2P	Silicon NPN epitaxial planer type

More results

Аналогичное описание - 2SD968

производитель	номер детали	датащи	подробное описание детали
Panasonic Semiconductor	2SC1317	67Kb / 3P	Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification)
	2SC1318A	45Kb / 3P	Silicon NPN epitaxial planer type(For low-frequency driver amplification)
	2SC1383	47Kb / 3P	Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification)
	2SC1509	47Kb / 3P	Silicon NPN epitaxial planer type(For low-frequency driver amplification)
	2SC3939	47Kb / 3P	Silicon NPN epitaxial planer type(For low-frequency driver amplification)
	2SC4606	48Kb / 3P	Silicon NPN epitaxial planer type(For low-frequency driver amplification)
	2SD1030	37Kb / 2P	Silicon NPN epitaxial planer type(For low-frequency amplification)
	2SD1149	39Kb / 2P	Silicon NPN epitaxial planer type(For low-frequency amplification)
	2SD1458	37Kb / 2P	Silicon NPN epitaxial planer type(For low-frequency amplification)
	2SD1994A	69Kb / 3P	Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification)

More results

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