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P4FMAF датащи(PDF) 1 Page - Rectron Semiconductor |
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P4FMAF датащи(HTML) 1 Page - Rectron Semiconductor |
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1 / 9 page ![]() SURFACE MOUNT GPP TRANSIENT VOLTAGE SUPPRESSOR 400 WATT PEAK POWER 1.0 WATTS STEADY STATE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS P4FMAF SERIES MAXIMUM RATINGS (@ TA=25 OC unless otherwise noted) FEATURES * Plastic package has underwriters laboratory * Glass passivated chip construction *400 watt surage capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time RATINGS Steady State Power Dissipation at TL = 75 O C lead length Peak Forward Surge Current, 8.3ms single half sine wave- superimmposed on rated load ( JEDEC METHOD ) (Note 2) Maximum Instantaneous Forward Voltage @25A for unidirectional only SYMBOL PM(AV) IFSM VF TJ, TSTG V -55 to + 150 0 C UNITS ( Note 4 ) A Peak Power Dissipation at TA = 25 OC,TP = 1mS (Note 1) Minimum 400 1.0 SEE TABLE 1 40 3.5/6.5 W VALUE Operating and Storage Temperature Range PPPM W Ratings at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load, For capacitive load, derate current by 20%. 2017-04 REV: A NOTES : 3. "Fully ROHS compliant", "100% Sn plating (Pb-free)". 2. Measured on 8.3mS single half Sine-Wave or equivalent wave, duty cycle = 4 pulses per minute maximum. Peak Pulse Current with a 10/1000uS waveform ( Note 1, Fig.3 ) IPPM A 1. Non-repetitive current pulse, per Fig.3 and derated above TA = 25 oC per Fig.2. 4. VF = 3.5V max. for devices of V(BR) < 200V and VF = 6.5V max. for devices of V(BR) > 200V. I 2t 6.64 A 2/Sec Typical Current Squarad Time SMAF Dimensions in millimeters and (inches) 2.8 2.4 0.110 0.094 0.15 0.11 0.006 0 0.004 3 . 1 0.028 . ( ( ) ) ( ( ) ) ( ( ) ) 0.051 0.7 1 . 1 0.035 . ( ( ) ) 0.043 0.9 |
Аналогичный номер детали - P4FMAF |
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Аналогичное описание - P4FMAF |
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