2SD2467 datasheet(1/2 Pages) PANASONIC

номер детали	2SD2467

подробное описание детали	Silicon NPN epitaxial planar type(For power switching)

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производитель	PANASONIC [Panasonic Semiconductor]

домашняя страница	http://www.panasonic.com/industrial/

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Power Transistors

2SD2467

Silicon NPN epitaxial planar type

For power switching

s Features

q

Low collector to emitter saturation voltage VCE(sat)

q

Satisfactory linearity of foward current transfer ratio hFE

q

Large collector current IC

q

Full-pack package with outstanding insulation, which can be in-

stalled to the heat sink with one screw

s Absolute Maximum Ratings (T

C=25˚C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

ICP

IC

PC

Tj

Tstg

Ratings

130

80

7

6

3

30

2

150

–55 to +150

Unit

V

A

W

˚C

s Electrical Characteristics (T

C=25˚C)

Parameter

Collector cutoff current

Emitter cutoff current

Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

Symbol

ICBO

IEBO

VCEO

hFE1

hFE2

*

VCE(sat)

VBE(sat)

fT

ton

tstg

tf

Conditions

VCB = 100V, IE = 0

VEB = 5V, IC = 0

IC = 10mA, IB = 0

VCE = 2V, IC = 0.1A

VCE = 2V, IC = 0.5A

IC = 2A, IB = 0.1A

VCE = 10V, IC = 0.5A, f = 10MHz

IC = 0.5A, IB1 = 50mA, IB2 = –50mA,

VCC = 50V

min

80

45

90

typ

30

0.5

2.5

0.15

max

10

50

260

0.5

1.5

Unit

µA

V

MHz

µs

*h

FE2 Rank classification

Rank

Q

P

hFE2

90 to 180

130 to 260

TC=25°C

Ta=25

°C

Unit: mm

1:Base

2:Collector

3:Emitter

TO–220E Full Pack Package

9.9

±0.3

23

1

4.6

±0.2

2.9

±0.2

2.6

±0.1

2.54

±0.2

0.75

±0.1

1.2

±0.15

5.08

±0.4

φ3.2±0.1

1.45

±0.15

0.7

±0.1

7

°

Аналогичный номер детали - 2SD2467

производитель	номер детали	датащи	подробное описание детали
Panasonic Semiconductor	2SD2460	34Kb / 2P	Silicon NPN epitaxial planer type(For low-frequency output amplification)
Toshiba Semiconductor	2SD2461	191Kb / 3P	NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)
	2SD2461	135Kb / 5P	Power Amplifier Applications
	2SD2461	135Kb / 5P	Power Amplifier Applications
	2SD2462	191Kb / 3P	NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

More results

Аналогичное описание - 2SD2467

производитель	номер детали	датащи	подробное описание детали
Panasonic Semiconductor	2SD1254	58Kb / 3P	Silicon NPN epitaxial planar type(For power switching)
	2SD1256	58Kb / 3P	Silicon NPN epitaxial planar type(For power switching)
	2SD1257	62Kb / 3P	Silicon NPN epitaxial planar type(For power switching)
	2SD1268	47Kb / 2P	Silicon NPN epitaxial planar type(For power switching)
	2SD1269	55Kb / 3P	Silicon NPN epitaxial planar type(For power switching)
	2SD1270	55Kb / 3P	Silicon NPN epitaxial planar type(For power switching)
	2SD1271	59Kb / 3P	Silicon NPN epitaxial planar type(For power switching)
	2SD1745	58Kb / 3P	Silicon NPN epitaxial planar type(For power switching)
	2SD2468	55Kb / 3P	Silicon NPN epitaxial planar type(For power switching)
	2SD2469	59Kb / 3P	Silicon NPN epitaxial planar type(For power switching)

More results

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