2SC6065 datasheet(2/4 Pages) SANYO

номер детали	2SC6065

подробное описание детали	NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications

PDF	4 Pages

Scroll/Zoom	100%

производитель	SANYO [Sanyo Semicon Device]

домашняя страница	https://www.sanyo-av.com/us/

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2 / 4 page

2SC6065

No.8561-2/4

Continued from preceding page.

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Gain-Bandwidth Product

VCE=10V, IC=0.1A

MHz

Output Capacitance

Cob

VCB=10V, f=1MHz

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=0.7A, IB=0.14A

0.8

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=0.7A, IB=0.14A

1.5

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=1mA, IE=0A

500

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=5mA, RBE=∞

400

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=1mA, IC=0A

Turn-ON Time

ton

IC=1A, IB1=0.2A, IB2=--0.4A, RL=200Ω, VCC=200V

0.5

µs

Storage Time

tstg

IC=1A, IB1=0.2A, IB2=--0.4A, RL=200Ω, VCC=200V

2.5

µs

Fall Time

IC=1A, IB1=0.2A, IB2=--0.4A, RL=200Ω, VCC=200V

0.25

µs

Package Dimensions

Switching Time Test Circuit

unit : mm

7519-003

6.9

0.5

0.6

2.5

1.45

1.0

0.9

0.45

2.54

1 : Emitter

2 : Collector

3 : Base

SANYO : NMP

VBE= --5V

VCC=200V

INPUT

OUTPUT

100

µF

470

µF

PW=20

µs

IB1

IB2

D.C.

≤1%

Ω

1.2

2.0

1.6

0.8

0.4

IC -- VCE

Collector-to-Emitter Voltage, VCE -- V IT06213

IB=0mA

10mA

20mA

50mA

100mA

150mA

200mA

250mA

300mA

350mA

1.0

1.8

1.4

0.6

0.2

IT06214

1.5

2.0

1.0

0.5

0.2

0.4

0.6

0.8

1.0

1.4

1.2

IC -- VBE

Base-to-Emitter Voltag, VBE -- V

VCE=5V

400mA

450mA

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