2SC6064 datasheet(2/4 Pages) SANYO

номер детали	2SC6064

подробное описание детали	NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications

PDF	4 Pages

Scroll/Zoom	100%

производитель	SANYO [Sanyo Semicon Device]

домашняя страница	https://www.sanyo-av.com/us/

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2 / 4 page

2SC6064

No. A0270-2/4

Continued from preceding page.

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=1A, IB=50mA

170

340

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=1A, IB=50mA

0.9

1.2

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=10µA, IE=0A

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=1mA, RBE=∞

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=10µA, IC=0A

Turn-ON Time

ton

See specified Test Circuit.

Storage Time

tstg

See specified Test Circuit.

330

Fall Time

See specified Test Circuit.

Package Dimensions

Switching Time Test Circuit

unit : mm

7519-003

VBE= --5V

VCC=25V

INPUT

OUTPUT

100

µF

470

µF

PW=20

µs

IB1

IB2

D.C.

≤1%

Ω

IC=10IB1= --10IB2=700mA

6.9

0.5

0.6

2.5

1.45

1.0

0.9

0.45

2.54

1 : Emitter

2 : Collector

3 : Base

SANYO : NMP

IC -- VCE

Collector-to-Emitter Voltage, VCE -- V

IC -- VBE

Base-to-Emitter Voltage, VBE -- V

1.2

2.0

1.6

0.8

0.4

1.2

0.8

1.6

0.2

0.6

1.4

1.0

1.8

2.0

IT10515

IB=0mA

1mA

2mA

3mA

5mA

10mA

1.0

1.8

1.4

0.6

0.2

IT10516

1.4

2.0

0.8

0.2

1.6

1.0

0.4

1.8

1.2

0.6

0.2

0.4

0.6

0.8

1.0

1.2

VCE=2V

15mA

20mA

25mA

30mA

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