2SC6044 datasheet(2/4 Pages) SANYO

номер детали	2SC6044

подробное описание детали	NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications

PDF	4 Pages

Scroll/Zoom	100%

производитель	SANYO [Sanyo Semicon Device]

домашняя страница	https://www.sanyo-av.com/us/

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2 / 4 page

2SC6044

No.8251-2/4

Continued from preceding page.

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=1.5A, IB=75mA

170

260

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=1.5A, IB=75mA

0.94

1.2

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=10µA, IE=0

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=1mA, RBE=∞

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=10µA, IC=0

Turn-ON Time

ton

See specified Test Circuit.

Storage Time

tstg

See specified Test Circuit.

350

Fall Time

See specified Test Circuit.

Package Dimensions

Switching Time Test Circuit

unit : mm

2038B

1 : Base

2 : Collector

3 : Emitter

SANYO : PCP

1.5

0.5

0.4

3.0

0.75

4.5

1.6

0.4

1.5

12V

20IB1= --20IB2=IC=500mA

--5V

Ω

INPUT

OUTPUT

100

µF

470

µF

PW=20

µs

IB1

D.C.

≤1%

IB2

IC -- VCE

IT09350

2.0

1.5

1.0

0.5

0.2

0.3

0.1

0.4

0.5

0.7

0.6

0.8

0.9

1.0

IC -- VBE

IT09351

0.8

1.2

1.4

1.6

1.8

2.0

0.4

0.6

1.0

0.2

0.8

0.6

0.4

0.2

1.0

1.2

1.4

1.6

2.0

1.8

VCE=2V

IB=0

1mA

2mA

3mA

4mA

5mA

6mA

8mA

10mA

15mA

Collector-to-Emitter Voltage, VCE -- V

Base-to-Emitter Voltage, VBE -- V

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