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2SC6022 датащи(PDF) 2 Page - Sanyo Semicon Device

номер детали 2SC6022
подробное описание детали  NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications
PDF  4 Pages
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производитель  SANYO [Sanyo Semicon Device]
домашняя страница  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SC6022 датащи(HTML) 2 Page - Sanyo Semicon Device

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2SC6022
No.8355-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Output Capacitance
Cob
VCB=10V, f=1MHz
40
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=2.5A, IB=50mA
100
150
mV
IC=4A, IB=200mA
120
180
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=2.5A, IB=50mA
0.85
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10µA, IE=0A
40
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
30
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10µA, IC=0A
6
V
Turn-ON Time
ton
See specified Test Circuit.
30
ns
Storage Time
tstg
See specified Test Circuit.
320
ns
Fall Time
tf
See specified Test Circuit.
15
ns
Package Dimensions
Package Dimensions
unit : mm
unit : mm
7518-003
7003-003
Switching Time Test Circuit
VR
RB
VCC=12V
IC=20IB1= --20IB2=2.5A
VBE= --5V
+
+
50
Ω
RL
INPUT
OUTPUT
100
µF
470
µF
PW=20
µs
IB1
D.C.
≤1%
IB2
6.5
5.0
2.3
0.5
12
4
3
0.85
0.7
1.2
0.6
0.5
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
6.5
5.0
2.3
0.5
12
4
3
0.85
0.6
0.5
1.2
2.3
2.3
0 to 0.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
IC -- VCE
IC -- VBE
Collector-to-Emitter Voltage, VCE -- V
Base-to-Emitter Voltage, VBE -- V
9
5
6
7
8
4
2
3
1
0
10
5
6
7
9
8
4
2
3
1
0
0.2
0
0.4
0.6
0.8
1.0
0.1
0.3
0.5
0.7
0.9
IT09466
10mA
20mA
40mA
60mA
80mA
100mA
IB=0mA
5mA
VCE=2V
0
0.2
0.4
0.6
0.8
1.0
0.1
0.3
0.5
0.7
0.9
IT09467
30mA
50mA



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