SC3S06504II datasheet(1/6 Pages) RECTRON

номер детали	SC3S06504II

подробное описание детали	Silicon Carbide Schottky Barrier Diode

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производитель	RECTRON [Rectron Semiconductor]

домашняя страница	http://www.rectron.com

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Isolated

Silicon Carbide Schottky Barrier Diode

Features

z

650-Volt Schottky Rectifier

z

Zero Reverse Recovery Current

z

Zero Forward Recovery Voltage

z

High-Frequency Operation

z

Temperature-Independent Switching Behavior

z

Extremely Fast Switching

z

Positive Temperature Coefficient on VF

Benefits

z

Replace Bipolar with Unipolar Rectifiers

z

Essentially No Switching Losses

z

Higher Efficiency

z

Reduction of Heat Sink Requirements

z

Parallel Devices Without Thermal Runaway

Applications

z

Switch Mode Power Supplies

z

Power Factor Correction

z

Motor Drives

Package

Part Number

Package

Marking

SC3S06504II

TO-220-2

06504

Maximum Ratings (TC=25

unless otherwise specified)

Symbol

Parameter

Value

Unit

Test Conditions

VRRM

Repetitive Peak Reverse Voltage

650

V

VRSM

Surge Peak Reverse Voltage

650

V

VDC

DC Blocking Voltage

650

V

IF

Continuous Forward Current

14

5.5

4

A

TC=25

TC=135

TC=150

IFRM

Repetitive Peak Forward Surge

Current

18.5

10

A

TC=25

,tP=10ms,Half Sine Wave

TC=110

,tP=10ms,Half Sine Wave

Ptot

Power Dissipation

51.5

22

W

TC=25

TC=110

dV/dt

Diode dV/dt ruggedness

200

V/ns

VR=0-650V

TJ,Tstg

Operating Junction and Storage

Temperature

-55 to

+175

2019-06/X

SC3S06504II

REV:A

1

2

3

3 - NC

Аналогичный номер детали - SC3S06504II

производитель	номер детали	датащи	подробное описание детали
Rectron Semiconductor	SC3S06504A	314Kb / 5P	650V4A Silicon Carbide Power Schottky Barrier Diode
Rectron Semiconductor	SC3S06504C	701Kb / 5P	650/4A silicon Carbide Power Schottky Barrier Diode

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