MAXIMUM RATINGS

UNITS

Reverse voltage

V

Peak reverse voltage

V

Average forw ard rectified current

Half w ave rectification w ith resist.load

and f

50Hz

Forw ard surge current @ t<1s and T

A

Pow er dissipation

@ T

mW

Thermal resistance junction to ambient

K/W

Junction temperature

Storage temperature range

ELECTRICAL CHARACTERISTICS

UNITS

Forw ard voltage

@

I

Leakage current

@T

Capacitance

@ V

f=1MH

Z

pF

Reverse recovery time

f rom I

f rom I

R

V

ns

50

-

-

--

MIN

TYP

250

1)

1.5

1.0

500

1)

mA

-

-

1.0

SMALL SIGNAL SWITCHING DIODE

1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.

-

15

MAX

-

-

-

BAV17

BAV18

BAV19

BAV20

BAV21

20

50

100

150

200

25

60

120

200

250

350

175

-55 --- +175

1)Valid prov ided that leads at a distance of 8 mm from case are kept at ambient temperature.

at reverse voltage

100

nA

μA

FEATURES

* Silicon epitaxial planar diode

* DO-35 Package,glass case

*

*

*

High speed switching diode

500 mW power dissipation

Polarity: Color band denotes cathode

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

Dimensions in inches and (millimeters)

MAX.

.150 (3.8)

1.083(27.5)

TYP.

.087 (2.2)

MAX.

DIA.

.022 (0.6 )

.018 (0.46)

DIA.

DO-35

1.083(27.5)

TYP.

BAV17

THRU

BAV21

2019-04/08

REV:O