SQJ208EP datasheet(2/12 Pages) VISHAY

2 / 12 page

SQJ208EP

www.vishay.com

Vishay Siliconix

S19-0037-Rev. B, 21-Jan-2019

Document Number: 77836

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-source breakdown voltage

VDS

VGS = 0 V, ID = 250 μA

N-Ch 1

VGS = 0 V, ID = 250 μA

N-Ch 2

Gate-source threshold voltage

VGS(th)

VDS = VGS, ID = 250 μA

N-Ch 1

1.3

1.8

2.3

VDS = VGS, ID = 250 μA

N-Ch 2

1.4

1.9

2.4

Gate-source leakage

IGSS

VDS = 0 V, VGS = ± 20 V

N-Ch 1

± 100

N-Ch 2

± 100

Zero gate voltage drain current

IDSS

VGS = 0 V

VDS = 40 V

N-Ch 1

μA

VGS = 0 V

VDS = 40 V

N-Ch 2

VGS = 0 V

VDS = 40 V, TJ = 125 °C

N-Ch 1

VGS = 0 V

VDS = 40 V, TJ = 125 °C

N-Ch 2

VGS = 0 V

VDS = 40 V, TJ = 175 °C

N-Ch 1

250

VGS = 0 V

VDS = 40 V, TJ = 175 °C

N-Ch 2

300

On-state drain current a

ID(on)

VGS = 10 V

VDS  5 V

N-Ch 1

VGS = 10 V

VDS  5 V

N-Ch 2

Drain-source on-state resistance a

RDS(on)

VGS = 10 V

ID = 6 A

N-Ch 1

0.00770 0.00940



VGS = 10 V

ID = 10 A

N-Ch 2

0.00320 0.00390

VGS = 10 V

ID = 6 A, TJ = 125 °C

N-Ch 1

0.01370

VGS = 10 V

ID = 10 A, TJ = 125 °C

N-Ch 2

0.00570

VGS = 10 V

ID = 6 A, TJ = 175 °C

N-Ch 1

0.01600

VGS = 10 V

ID = 10 A, TJ = 175 °C

N-Ch 2

0.00670

VGS = 4.5 V

ID = 4 A

N-Ch 1

0.00970 0.01173

VGS = 4.5 V

ID = 8 A

N-Ch 2

0.00400 0.00480

Forward transconductance b

gfs

VDS = 15 V, ID = 6 A

N-Ch 1

VDS = 15 V, ID = 10 A

N-Ch 2

Dynamic b

Input capacitance

Ciss

VGS = 0 V

VDS = 25 V, f = 1 MHz

N-Ch 1

1197

1700

VGS = 0 V

VDS = 25 V, f = 1 MHz

N-Ch 2

2839

3900

Output capacitance

Coss

VGS = 0 V

VDS = 25 V, f = 1 MHz

N-Ch 1

331

500

VGS = 0 V

VDS = 25 V, f = 1 MHz

N-Ch 2

888

1250

Reverse transfer capacitance

Crss

VGS = 0 V

VDS = 25 V, f = 1 MHz

N-Ch 1

VGS = 0 V

VDS = 25 V, f = 1 MHz

N-Ch 2

Total gate charge c

VGS = 10 V

VDS = 20 V, ID = 1 A

N-Ch 1

VGS = 10 V

VDS = 20 V, ID = 1 A

N-Ch 2

48.2

Gate-source charge c

Qgs

VGS = 10 V

VDS = 20 V, ID = 1 A

N-Ch 1

3.5

VGS = 10 V

VDS = 20 V, ID = 1 A

N-Ch 2

7.1

Gate-drain charge c

Qgd

VGS = 10 V

VDS = 20 V, ID = 1 A

N-Ch 1

3.9

VGS = 10 V

VDS = 20 V, ID = 1 A

N-Ch 2

Gate resistance

f = 1 MHz

N-Ch 1

1.74

3.49

5.30



N-Ch 2

0.55

1.10

1.65

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