M28F420 datasheet(10/38 Pages) STMICROELECTRONICS

номер детали	M28F420

подробное описание детали	4 Megabit (x8 or x16, Block Erase) FLASH MEMORY

PDF	38 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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10 / 38 page

Symbol

Alt

Parameter

M28F410 / 20

Unit

-70

-80

-100

-120

VCC =5V

± 5% VCC =5V ± 10% VCC =5V ± 10% VCC =5V ± 10%

SRAM

Interface

EPROM

Interface

EPROM

Interface

EPROM

Interface

Min

Max

Min

Max

Min

Max

Min

Max

tAVAV

tRC

Address Valid to

Next Address Valid

100

120

tAVQV

tACC

Address Valid to

Output Valid

100

120

tPHQV

tPWH

Power Down High

to Output Valid

300

tELQX

(2)

tLZ

Chip Enable Low to

Output Transition

000

tELQV

(3)

tCE

Chip Enable Low to

Output Valid

100

120

tGLQX

(2 )

tOLZ

Output Enable Low

to Output Transition

000

tGLQV

(3 )

tOE

Output Enable Low

to Output Valid

tEHQX

(2)

tOH

Chip Enable High

to Output Transition

000

tEHQZ

(2 )

tHZ

Chip Enable High

to Output Hi-Z

tGHQX

(2)

tOH

Output Enable High

to Output Transition

000

tGHQZ

(2)

tDF

Output Enable High

to Output Hi-Z

tAXQX

(2 )

tOH

Address Transition

to Output Transition

000

Notes: 1. See Figure 3 and Table 8 for timing measurements.

2. Sampled only, not 100% tested.

3. G may be delayed by up to tELQV -tGLQV after the falling edge of E without increasing tELQV.

Table 13. Read AC Characteristics (1)

(TA = 0 to 70

°C or –40 to 85°C; VPP = 12V ± 5%)

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