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FSL136HR датащи(PDF) 4 Page - ON Semiconductor

номер детали FSL136HR
подробное описание детали  Green Mode Power Switch
PDF  15 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
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FSL136HR датащи(HTML) 4 Page - ON Semiconductor

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ABSOLUTE MAXIMUM RATINGS (continued)(TJ = 25°C unless otherwise specified) (continued)
Symbol
Unit
Max
Min
Parameter
QJA
Junction−to−Ambient Thermal Resistance (Note 7, 8)
80
°C/W
QJC
Junction−to−Case Thermal Resistance (Note 7, 9)
19
QJT
Junction−to−Top Thermal Resistance (Note 7, 10)
33.7
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
4. Repetitive rating: pulse width limited by maximum junction temperature.
5. L = 51 mH, starting TJ = 25°C.
6. Meets JEDEC standards JESD 22−A114 and JESD 22−C101.
7. All items are tested with the standards JESD 51−2 and JESD 51−10.
8. QJA free−standing, with no heat−sink, under natural convection.
9. QJC junction−to−lead thermal characteristics under QJA test condition. TC is measured on the source #7 pin closed to plastic interface for
QJA thermo−couple mounted on soldering.
10.QJT junction−to−top of thermal characteristic under QJA test condition. Tt is measured on top of package. Thermo−couple is mounted in
epoxy glue.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
SENSEFET SECTION
BVDSS
Drain−Source Breakdown Voltage
VCC = 0 V, ID = 250 mA
650
V
IDSS
Zero Gate Voltage Drain Current
VDS = 650 V, VGS = 0 V
250
mA
RDS(ON)
Drain−Source On−State Resistance
VGS = 10 V, VGS = 0 V, TC = 25°C
3.5
4.0
W
CISS
Input Capacitance
VGS = 0 V, VDS = 25 V, f = 1MHz
290
pF
COSS
Output Capacitance
VGS = 0 V, VDS = 25 V, f = 1MHz
45
pF
CRSS
Reverse Transfer Capacitance
VGS = 0 V, VDS = 25 V, f = 1MHz
5.5
pF
td(on)
Turn−on Delay
VDD = 350 V, ID = 3.5 A
12
ns
tr
Rise Time
VDD = 350 V, ID = 3.5 A
22
ns
td(off)
Turn−off Delay
VDD = 350 V, ID = 3.5 A
20
ns
tf
Fall Time
VDD = 350 V, ID = 3.5 A
19
ns
CONTROL SECTION
fOSC
Switching Frequency
VDS = 650 V, VGS = 0 V
90
100
110
kHz
DfOSC
Switching Frequency Variation
VGS = 10 V, VGS = 0 V, TC = 125°C
±5
±10
%
fFM
Frequency Modulation
±3
kHz
DMAX
Maximum Duty Cycle
VFB = 4 V
71
77
83
%
DMIN
Minimum Duty Ratio
VFB = 0 V
0
0
0
%
VSTART
UVLO Threshold Voltage
11
12
13
V
VSTOP
After Turn−on
7.0
8.0
9.0
V
IFB
Feedback Source Current
VFB = 0
320
400
480
mA
tS/S
Internal Soft−Start Time
VFB = 4 V
15
20
25
ms
BURST−MODE SECTION
VBURH
Burst−Mode Voltage
TJ = 25°C
0.4
0.5
0.6
V
VBURL
0.25
0.35
0.45
V
VBURH(HYS)
150
mV
PROTECTION SECTION
ILIM
Peak Current Limit
TJ = 25°C, di/dt = 300 mA/ms
1.89
2.15
2.41
A
tCLD
Current Limit Delay Time (Note 11)
200
ns
VSD
Shutdown Feedback Voltage
VCC = 15 V
5.5
6.0
6.5
V



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