P24LF4QLK datasheet(2/4 Pages) SHINDENGEN

2 / 4 page

Electrical Characteristics (unless otherwise specified : Tc=25℃)

Item

Symbol

Conditions

Ratings

Unit

MIN

TYP

MAX

Drain-Source breakdown

voltage

ID=1mA, VGS=0V

Zero gate voltage drain current

VDS=40V, VGS=0V

μA

Gate-source leakage current

VGS=±20V, VDS=0V

0.1

μA

Forward transconductance

ID=12A, VDS=10V

Static drain-source on-state

resistance

ID=12A, VGS=10V

0.0106 0.0132

Static drain-source on-state

resistance

ID=12A, VGS=4.5V

0.0158 0.021

Gate threshold voltage

Vth

ID=1mA, VDS=10V

1.5

2.5

Source-drain diode forward

voltage

IS=24A, VGS=0V

1.5

Thermal resistance

Rth(j-c)

Junction to case

℃/W

Total gate charge

VDD=32V, VGS=10V, ID=24A

Gate to source charge

Qgs

VDD=32V, VGS=10V, ID=24A

5.1

Gate to drain charge

Qgd

VDD=32V, VGS=10V, ID=24A

5.1

Input capacitance

Ciss

VDS=25V, VGS=0V, f=1MHz

884

Reverce transfer capacitnce

Crss

VDS=25V, VGS=0V, f=1MHz

Output capacitance

Coss

VDS=25V, VGS=0V, f=1MHz

128

Turn-on delay time

td(on)

ID=12A, RL=1.67Ω, VDD=20V, Rg=0Ω,

VGS(+)=10V, VGS(-)=0V

3.5

Rise time

ID=12A, RL=1.67Ω, VDD=20V, Rg=0Ω,

VGS(+)=10V, VGS(-)=0V

8.5

Turn-off delay time

td(off)

ID=12A, RL=1.67Ω, VDD=20V, Rg=0Ω,

VGS(+)=10V, VGS(-)=0V

Fall time

ID=12A, RL=1.67Ω, VDD=20V, Rg=0Ω,

VGS(+)=10V, VGS(-)=0V

4.5

Diode reverse recovery time

trr

IF=24A, VGS=0V, di/dt=100A/μs

Diode reverse recovery charge

Qrr

IF=24A, VGS=0V, di/dt=100A/μs

※︓See the original Specifications

(BR)DSS

DSS

GSS

DS(ON)

Shindengen Electric Manufacturing Co., Ltd.

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P24LF4QLK_Rev.02(2020.08)

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