SCTL90N65G2V datasheet(3/14 Pages) STMICROELECTRONICS

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Electrical characteristics

(TC = 25 °C unless otherwise specified).

Table 3. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

650

IDSS

Zero gate voltage drain current

VDS = 650 V, VGS = 0 V

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = -10 to 22 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 1 mA

1.8

3.2

5.0

RDS(on)

Static drain-source on-resistance

VGS = 18 V, ID = 40 A

mΩ

VGS = 18 V, ID = 40 A, TJ = 175 °C

Table 4. Dynamic, based on HiP247 package option

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 400 V, f = 1 MHz, VGS = 0 V

3380

Coss

Output capacitance

294

Crss

Reverse transfer capacitance

Gate input resistance

f = 1 MHz, ID = 0 A

Total gate charge

VDD = 400 V, ID = 50 A,

VGS = -5 V to 18 V

157

Qgs

Gate-source charge

Qgd

Gate-drain charge

Table 5. Switching energy (inductive load), based on HiP247 package option

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Eon

Turn-on switching energy

VGS = -5 to 18 V, VDD = 400 V,

ID = 50 A, RG = 2.2 Ω

130

µJ

Eoff

Turn-off switching energy

210

µJ

Eon

Turn-on switching energy

VGS = -5 to 18 V, VDD = 400 V,

ID = 50 A, RG = 2.2 Ω, TC = 150 °C

135

µJ

Eoff

Turn-off switching energy

200

µJ

Table 6. Switching times, based on HiP247 package option

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 400 V, ID = 50 A,

RG = 2.2 Ω, VGS = -5 V to 18 V

Fall time

td(off)

Turn-off delay time

Rise time

SCTL90N65G2V

Electrical characteristics

DS13588 - Rev 1

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