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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SD2589 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD2589 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Darlington Power Transistor 2SD2589 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) · High DC Current Gain- : hFE= 5000( Min.) @(IC= 5A, VCE= 4V) · Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 10A, IB= 5mA) · Complement to Type 2SB1649 · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ |
Аналогичный номер детали - 2SD2589 |
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Аналогичное описание - 2SD2589 |
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