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ESDM3033 датащи(PDF) 2 Page - ON Semiconductor

номер детали ESDM3033
подробное описание детали  ESD Protection Diode Micro?뭁ackaged Diodes for ESD Protection
PDF  7 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

ESDM3033 датащи(HTML) 2 Page - ON Semiconductor

  ESDM3033 Datasheet HTML 1Page - ON Semiconductor ESDM3033 Datasheet HTML 2Page - ON Semiconductor ESDM3033 Datasheet HTML 3Page - ON Semiconductor ESDM3033 Datasheet HTML 4Page - ON Semiconductor ESDM3033 Datasheet HTML 5Page - ON Semiconductor ESDM3033 Datasheet HTML 6Page - ON Semiconductor ESDM3033 Datasheet HTML 7Page - ON Semiconductor  
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Bi−Directional
IPP
IPP
V
I
IR
IT
IT
IR
VRWM
VC VBR
VRWM
VC
VBR
ESDM3033
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Working Voltage
VRWM
3.3
V
Breakdown Voltage (Note 2)
VBR
IT = 1 mA
5.1
7.0
V
Reverse Leakage Current
IR
VRWM = 3.3 V
0.1
mA
Clamping Voltage (Note 3)
VC
IPP = 1 A
6.0
V
Clamping Voltage (Note 3)
VC
IPP = 8 A
8.2
V
Peak Pulse Current (Note 3)
IPP
tP = 8/20 ms
9.9
A
Clamping Voltage
TLP (Note 4)
VC
IPP = 16 A
IEC 61000−4−2 Level 4 equivalent
(±8 kV Contact, ±15 kV Air)
7.5
V
Junction Capacitance
CJ
VR = 0 V, f = 1 MHz
21
pF
Dynamic Resistance
RDYN
TLP Pulse
0.11
W
Insertion Loss
f = 10 MHz
0.01
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.
3. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−5 waveform.
4. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z0 = 50 W, tp = 100 ns, tr = 4 ns, averaging window; t1 = 30 ns to t2 = 60 ns.
TYPICAL CHARACTERISTICS
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2
TIME (ns)
−20
140
0
20
40
60
80
100
120
TIME (ns)
−20
140
0
20
40
60
80
100
120
40
35
30
25
20
15
10
5
0
−5
5
0
−5
−10
−15
−20
−25
−30
−35
−40



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