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LMV792 датащи(PDF) 4 Page - National Semiconductor (TI) |
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LMV792 датащи(HTML) 4 Page - National Semiconductor (TI) |
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4 / 21 page ![]() 5V Electrical Characteristics (Continued) V OUT Output Swing High R LOAD =2k Ω to V+/2 35 75 82 mV from rail R LOAD =10k Ω to V+/2 25 65 71 Output Swing Low R LOAD =2k Ω to V+/2 LMV791 42 75 78 LMV792 50 80 83 R LOAD =10k Ω to V+/2 20 65 67 I OUT Output Short Circuit Current Sourcing to V − V IN = 200 mV (Note 9) 45 37 60 mA Sinking to V + V IN = –200 mV (Note 9) 10 6 21 I S Supply Current per Amplifier Enable Mode V EN ≥ 4.6V LMV791 1.15 1.40 1.75 mA LMV792 per channel 1.30 1.70 2.05 Shutdown Mode (V EN ≤ 0.4V) 0.14 1 5 µA SR Slew Rate A V = +1, Rising (10% to 90%) 6.0 9.5 V/µs A V = +1, Falling (90% to 10%) 7.5 11.5 GBWP Gain Bandwidth Product 17 MHz e n Input-Referred Voltage Noise f = 1 kHz 5.8 nV/ i n Input-Referred Current Noise f = 1 kHz 0.01 pA/ t on Turn-on Time 110 ns t off Turn-off Time 800 ns V EN Enable Pin Voltage Range Enable Mode 4.6 4.5 to 5 V Shutdown Mode 0 to 0.5 0.4 I EN Enable Pin Input Current Enable Mode V EN = 5.0V (Note 7) 5.6 10 µA Shutdown Mode V EN =0V (Note 7) 0.005 0.2 THD+N Total Harmonic Distortion + Noise f = 1 kHz, A V =1,RLOAD = 600 Ω 0.01 % Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics Tables. Note 2: Human Body Model is 1.5 k Ω in series with 100 pF. Machine Model is 0Ω in series with 200 pF Note 3: The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is PD =(TJ(MAX) -TA)/θJA. All numbers apply for packages soldered directly onto a PC Board. Note 4: Typical values represent the parametric norm at the time of characterization. Note 5: Limits are 100% production tested at 25˚C. Limits over the operating temperature range are guaranteed through correlations using the statistical quality control (SQC) method. Note 6: Offset voltage average drift is determined by dividing the change in VOS by temperature change. Note 7: Positive current corresponds to current flowing into the device. Note 8: Input bias current and input offset current are guaranteed by design Note 9: The short circuit test is a momentary test, the short circuit duration is 1.5 ms. www.national.com 4 |
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