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CUS15S40 датащи(PDF) 2 Page - Toshiba Semiconductor |
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CUS15S40 датащи(HTML) 2 Page - Toshiba Semiconductor |
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2 / 6 page ![]() CUS15S40 2 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T Absolute Maximum Ratings (Note) (Unless otherwise specified, T Absolute Maximum Ratings (Note) (Unless otherwise specified, T Absolute Maximum Ratings (Note) (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) Characteristics Peak reverse voltage Average rectified current Non-repetitive peak forward surge current Junction temperature Storage temperature Symbol VRM IO IFSM Tj Tstg Note (Note 1) (Note 2) Rating 40 1.5 5 125 -55 to 125 Unit V A A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) Note 2: Measured with a 10 ms pulse. 5. 5. 5. 5. Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) Characteristics Forward voltage Forward voltage Reverse current Total capacitance Symbol VF(1) VF(2) IR Ct Test Condition IF = 1 A (Pulse test) IF = 1.5 A (Pulse test) VR = 40 V (Pulse test) VR = 0 V, f = 1 MHz Min Typ. 0.40 0.47 170 Max 0.45 0.55 200 Unit V V µA pF 6. 6. 6. 6. Marking Marking Marking Marking Fig. Fig. Fig. Fig. 6.1 6.1 6.1 6.1 Marking Marking Marking Marking Marking Code 7D Part Number CUS15S40 7. 7. 7. 7. Usage Considerations Usage Considerations Usage Considerations Usage Considerations • Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both forward and reverse power losses of SBDs should be considered for thermal and safety design. 2014-04-07 Rev.3.0 |
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