| поискавой системы для электроныых деталей |
|
V61103C датащи(PDF) 1 Page - Vishay Siliconix |
|
|
|||||||||||||||||||||||||||||
V61103C датащи(HTML) 1 Page - Vishay Siliconix |
|
1 / 5 page ![]() V61103C www.vishay.com Vishay General Semiconductor Revision: 22-Dec-2020 1 Document Number: 98161 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.34 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. MECHANICAL DATA Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: as marked Mounting Torque: 10 in-lbs maximum Note (1) The heat generated must be less than the thermal conductivity from junction to ambient: dPD/dTJ <1/ RθJA PRIMARY CHARACTERISTICS IF(AV) 2 x 30 A VRRM 100 V IFSM 320 A VF at IF = 30 A (125 °C) 0.63 V TJ max. 150 °C Package TO-220AB Circuit configuration Common cathode TO-220AB 1 2 3 PIN 1 PIN 2 CASE PIN 3 MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V61103C UNIT Maximum repetitive peak reverse voltage VRRM 100 V Maximum average forward rectified current (fig. 1) per device IF(AV) 60 A per diode 30 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 320 A Operating junction temperature range TJ (1) -40 to +150 °C Storage temperature range TSTG -55 to +150 |
Аналогичный номер детали - V61103C |
|
Аналогичное описание - V61103C |
|
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |