EPC2015C datasheet(2/6 Pages) EPC-CO

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eGaN® FET DATASHEET

EPC2015C

| 2

VGS – Gate-to-Source Voltage (V)

2.5

3.0

3.5

4.0

4.5

5.0

Figure 3: RDS(on) vs. VGS for Various Drain Currents

ID = 10 A

ID = 20 A

ID = 50 A

ID = 100 A

200

150

100

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

25°C

125°C

VDS = 3 V

VGS – Gate-to-Source Voltage (V)

Figure 2: Transfer Characteristics

25°C

125°C

ID = 33 A

VGS – Gate-to-Source Voltage (V)

Figure 4: RDS(on) vs. VGS for Various Temperatures

2.5

3.0

3.5

4.0

4.5

5.0

200

150

100

0.5

1.0

1.5

2.0

2.5

3.0

VDS – Drain-to-Source Voltage (V)

VGS = 5 V

VGS = 4 V

VGS = 3 V

VGS = 2 V

Figure 1: Typical Output Characteristics at 25°C

Dynamic Characteristics (TJ = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

CISS

Input Capacitance

VDS = 20 V, VGS = 0 V

980

1180

CRSS

Reverse Transfer Capacitance

COSS

Output Capacitance

710

1070

COSS(ER)

Effective Output Capacitance, Energy Related (Note 2)

VDS = 0 to 20 V, VGS = 0 V

870

COSS(TR)

Effective Output Capacitance, Time Related (Note 3)

940

Gate Resistance

0.3

Total Gate Charge

VDS = 20 V, VGS = 5 V, ID = 33 A

8.7

11.2

QGS

Gate-to-Source Charge

VDS = 20 V, ID = 33 A

2.7

QGD

Gate-to-Drain Charge

1.2

QG(TH)

Gate Charge at Threshold

1.9

QOSS

Output Charge

VDS = 20 V, VGS = 0 V

QRR

Source-Drain Recovery Charge

All measurements were done with substrate connected to source.

Note 2: COSS(ER) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to 50% BVDSS.

Note 3: COSS(TR) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 50% BVDSS.

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