EPC2012C datasheet(3/6 Pages) EPC-CO

номер детали	EPC2012C

подробное описание детали	Enhancement Mode Power Transistor

PDF	6 Pages

Scroll/Zoom	100%

производитель	EPC-CO [Efficient Power Conversion Corporation.]

домашняя страница	https://epc-co.com/

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3 / 6 page

eGaN® FET DATASHEET

EPC2012C

| 3

All measurements were done with substrate shortened to source.

VDS – Drain-to-Source Voltage (V)

100

150

200

250

100

150

200

COSS = CGD+CSD

CISS = CGD+CGS

CRSS = CGD

Figure 5a: Capacitance (Linear Scale)

QG – Gate Charge (nC)

0.2

0.4

0.6

0.8

ID = 3 A

VDS= 100 V

Figure 6: Gate Charge

VDS – Drain-to-Source Voltage (V)

100

101

102

103

10-1

100

150

200

Figure 5b: Capacitance (Log Scale)

COSS = CGD+CSD

CISS = CGD+CGS

CRSS = CGD

VSD – Source-to-Drain Voltage(V )

0.5

1.5

2.5

3.5

4.5

Figure 7: Reverse Drain-Source Characteristics

25˚C

VGS = 0 V

125˚C

TJ – Junction Temperature (˚C )

0.5

1.5

2.5

-25

100

125

150

ID = 3 A

VGS = 5 V

Figure 8: Normalized On Resistance vs. Temperature

0.6

0.7

0.8

0.9

1.1

1.2

1.3

1.4

-25

100

125

150

ID = 1 mA

Figure 9: Normalized Threshold Voltage vs. Temperature

TJ – Junction Temperature (˚C)

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