V10PWM12 datasheet(2/5 Pages) VISHAY

номер детали	V10PWM12

подробное описание детали	High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.51 V at IF = 5 A

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V10PWM12

www.vishay.com

Vishay General Semiconductor

Revision: 04-Mar-2021

Document Number: 98188

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: pulse width

≤ 5 ms

Notes

(1) The heat generated must be less than thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RθJA

(2) Free air, mounted on recommended copper pad area; thermal resistance RθJA - junction to ambient

(3) Mounted on infinite heat sink; thermal resistance RθJM - junction-to-mount

Note

(1) AEC-Q101 qualified

ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

Instantaneous forward voltage

IF = 5.0 A

TJ = 25 °C

VF (1)

0.59

IF = 10 A

0.73

0.82

IF = 5.0 A

TJ = 125 °C

0.51

IF = 10 A

0.62

0.69

Reverse current

VR = 90 V

TJ = 25 °C

IR (2)

0.002

TJ = 125 °C

1.8

VR = 120 V

TJ = 25 °C

0.4

TJ = 125 °C

3.5

Typical junction capacitance

4.0 V, 1 MHz

1130

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V10PWM12

UNIT

Typical thermal resistance

RθJA

(1)(2)

°C/W

RθJM

(3)

2.5

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

V10PWM12-M3/I

0.20

4500

13" diameter plastic tape and reel

V10PWM12HM3/I (1)

0.20

4500

13" diameter plastic tape and reel

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