UTT40P04L-S08-R datasheet(1/4 Pages) DOINGTER

номер детали	UTT40P04L-S08-R

подробное описание детали	P-Channel MOSFET uses advanced trench technology

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производитель	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

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Description：

This P-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=-40V,ID=-10A,RDS(ON)<15mΩ@VGS=-10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(T

C=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

-40

V

VGS

Gate-Source Voltage

±20

V

ID

Continuous Drain Current-TC=25℃

-10

A

Continuous Drain Current-TC=100℃

-6.3

Pulsed Drain Current

1

-40

EAS

Single Pulse Avalanche Energy

---

mJ

PD

Power Dissipation

4.2

W

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

RƟJC

Thermal Resistance,Junction to Case

30

℃/W

RƟJA

Thermal Resistance,Junction to Ambient

60

G

D

S1

S

UTT40P04L-S08-R

Аналогичный номер детали - UTT40P04L-S08-R

производитель	номер детали	датащи	подробное описание детали
Unisonic Technologies	UTT40P04L-TA3-T	133Kb / 3P	40V, 50A P-CHANNEL POWER MOSFET
	UTT40P04L-TA3-T	176Kb / 4P	P-CHANNEL POWER MOSFET
	UTT40P04L-TA3-T	176Kb / 4P	P-CHANNEL POWER MOSFET
	UTT40P04L-TM3-T	133Kb / 3P	40V, 50A P-CHANNEL POWER MOSFET
	UTT40P04L-TM3-T	176Kb / 4P	P-CHANNEL POWER MOSFET

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Аналогичное описание - UTT40P04L-S08-R

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Аналогичный номер детали - UTT40P04L-S08-R

Аналогичное описание - UTT40P04L-S08-R

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