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UTT20N10L-TN3-R датащи(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

номер детали UTT20N10L-TN3-R
подробное описание детали  N-Channel MOSFET uses advanced trench technology
PDF  4 Pages
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производитель  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
домашняя страница  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

UTT20N10L-TN3-R датащи(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
V(BR)DSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
100
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=100V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
1.22
---
2.4
V
RDS(ON)
Drain-Source On Resistance
a
VGS=10V,ID=8A
---
---
152
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
VDS=25V, VGS=0V, f=1MHz
---
500
---
pF
Coss
Output Capacitance
---
48
---
Crss
Reverse Transfer Capacitance
---
27
---
Switching Characteristics
td(on)
Turn-On Delay Time
VDD=30V, RL =15Ω
VGS=10V, RGEN=2.5Ω
---
12.4
---
ns
tr
Rise Time
---
12
---
ns
td(off)
Turn-Off Delay Time
---
27.3
---
ns
tf
Fall Time
---
2.6
---
ns
Qg
Total Gate Charge
VDS=30V, VGS=10V, ID=3A
---
16.8
---
nC
Qgs
Gate-Source
Charge
---
5
---
nC
Qgd
Gate-Drain Charge
---
4
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
IS=1A, VGS=0V
---
---
1.1
V
Notes:
Pulse test: pulse width ≦ 300us, duty cycle≦ 2%, Guaranteed by design, not subject to production testing.
UTT20N10L-TN3-R



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