UTM4953L-S08-R datasheet(2/5 Pages) DOINGTER

номер детали	UTM4953L-S08-R

подробное описание детали	Dual P-Channel MOSFET uses advanced trench technology

PDF	5 Pages

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производитель	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

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Electrical Characteristics：(T

C=25℃ unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

Off Characteristics

BVDSS

Drain-Sourtce Breakdown Voltage

VGS=0V,ID=-250μA

-30

---

IDSS

Zero Gate Voltage Drain Current

VGS=0V, VDS=-24

---

-1

μA

IGSS

Gate-Source Leakage Current

VGS=±10V, VDS=0A

---

±100

On Characteristics

VGS(th)

GATE-Source Threshold Voltage

VGS=VDS, ID=-250μA

-0.7

-1

-1.3

RDS(ON)

Drain-Source On Resistance

VGS=-10V,ID=-4.2A

mΩ

VGS=-4.5V,ID=-4A

---

VGS=-2.5V,ID=-1A

---

130

GFS

Forward Transconductance

VDS=-5V, ID=-4.2A

---

Dynamic Characteristics

Ciss

Input Capacitance

VDS=-15V, VGS=0V, f=1MHz

---

880

---

Coss

Output Capacitance

---

105

---

Crss

Reverse Transfer Capacitance

---

Switching Characteristics

td(on)

Turn-On Delay Time

VDD=-15V, RL=6Ω

VGS=-10V, ID=-4.2A

---

Rise Time

---

td(off)

Turn-Off Delay Time

---

Fall Time

---

Total Gate Charge

VGS=-4.5V, VDS=-15V,

ID=-4.2A

---

8.5

---

Qgs

Gate-Source

Charge

---

1.8

---

Qgd

2.7

---

Drain-Source Diode Characteristics

VSD

Source-Drain Diode Forward Voltage

VGS=0V,IS=-4.2A

---

-1.2

Gate-Drain Charge

Notes:

Repetitive Rating: Pulse width limited by maximum junction temperature.

Surface Mounted on FR4 Board, t ≤ 10 sec.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

Guaranteed by design, not subject to production

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UTM4953L-S08-R

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