BAS516

1

Switching Diodes Silicon Epitaxial Planar

BAS516

BAS516

BAS516

BAS516

Start of commercial production

2016-08

1.

1.

1.

1. Applications

Applications

Applications

Applications

•

Ultra-High-Speed Switching

2.

2.

2.

2. Packaging and Internal Circuit

Packaging and Internal Circuit

Packaging and Internal Circuit

Packaging and Internal Circuit

ESC

1: Cathode

2: Anode

3.

3.

3.

3. Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

= 25

= 25

= 25 





))))

Characteristics

Peak reverse voltage

Reverse voltage

Peak forward current

Average rectified current

Non-repetitive peak forward surge current

Power dissipation

Junction temperature

Storage temperature

Symbol

Note

(Note 1)

(Note 2)

Rating

100

100

500

250

1

150

150

-55 to 150

Unit

V

mA

A

mW



Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Measured with a 10 ms pulse.

Note 2: Mounted on an FR4 board (20 mm × 20 mm, Cu pad: 4 mm × 4 mm)

2016-10-20

Rev.1.0

©2016 Toshiba Corporation