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UI6008 датащи(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

номер детали UI6008
подробное описание детали  N-Channel MOSFET uses advanced trench technology
PDF  4 Pages
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производитель  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
домашняя страница  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

UI6008 датащи(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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2 —
Electrical Characteristics：(T
C=25℃
unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Dra i n-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
60
---
---
V
IDSS
Zero Ga te Voltage Drain Current
VGS=0V, VDS=60V
---
---
1
μA
IGSS
Ga te-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Vol tage
VGS=VDS, ID=250μA
1.2
1.8
2.5
V
RDS(ON)
Dra i n-Source On Resistance
3
VGS=10V,ID=6A
---
60
75
mΩ
VGS=4.5V,ID=3A
---
70
90
GFS
Forwa rd Tra nsconductance
VDS=10V, ID=3A
---
4
---
S
Dynamic Characteristics
Ciss
Input Ca pacitance
VDS=15V, VGS=0V, f=1MHz
---
500
725
pF
Coss
Output Ca pacitance
---
45
65
Crss
Reverse Tra nsfer Ca pacitance
---
16
30
Switching Characteristics
td(on)
Turn-On Delay Ti me
3
VDD=30V, ID=1A,
VGS=10V,RGEN=3.3Ω
---
2.9
---
ns
tr
Ri s e Time
2,3
---
9.5
---
ns
td(off)
Turn-Off Delay Ti me
---
18.4
---
ns
tf
Fa ll Ti me
2,3
---
5.3
---
ns
Qg
Tota l Gate Charge
3
VGS=10V, VDS=48V,
ID=6A
---
9.3
13
nC
Qgs
Ga te-Source Cha rge
---
2.1
3
nC
Qgd
Ga te-Drain “Miller” Charge
---
1.8
4
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
3
VGS=0V,IS=1A
---
---
1
V
UI6008



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