UD8014 datasheet(1/4 Pages) DOINGTER

номер детали	UD8014

подробное описание детали	N-Channel MOSFET uses advanced SGT technology

PDF	4 Pages

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производитель	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

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Channel MOSFET uses advanced SGT technology and

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Description：

This N-

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=80V,ID=70A,RDS(ON)<8mΩ@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(T

C=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

80

V

VGS

Gate-Source Voltage

±20

V

ID

Continuous Drain Current-TC=25℃

1

70

A

Continuous Drain Current-TC=100℃

---

Pulsed Drain Current

2

210

EAS

Single Pulse Avalanche Energy

5

60

mJ

PD

Power Dissipation

3

125

W

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

RƟJC

Thermal Resistance,Junction to Case

1

℃/W

RƟJA

Thermal Resistance Junction to mbient

4

62

℃/W

D

S

G

UD8014

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