MMDF3N04HDR2 datasheet(2/12 Pages) ONSEMI

номер детали	MMDF3N04HDR2

подробное описание детали	Power MOSFET 3 Amps, 40 Volts

PDF	12 Pages

Scroll/Zoom	100%

производитель	ONSEMI [ON Semiconductor]

домашняя страница	http://www.onsemi.com

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MMDF3N04HD

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MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

Vdc

Drain−to−Gate Voltage (RGS = 1.0 MW)

VDGR

Vdc

Gate−to−Source Voltage − Continuous

VGS

± 20

Vdc

Drain Current − Continuous @ TA = 25°C (Note 1)

Drain Current− Continuous @ TA = 70°C (Note 1)

Drain Current− Pulsed Drain Current (Note 3)

IDM

3.4

3.0

Adc

Apk

Total Power Dissipation @ TA = 25°C (Note 1)

Linear Derating Factor (1)

2.0

Watts

mW/

°C

Total Power Dissipation @ TA = 25°C (Note 2)

Linear Derating Factor (2)

1.39

11.11

Watts

mW/

°C

Operating and Storage Temperature Range

TJ, Tstg

− 55 to 150

°C

Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C

(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 9.0 Apk, L = 4.0 mH, VDS = 40 Vdc)

EAS

162

THERMAL RESISTANCE

Rating

Symbol

Typ.

Max.

Unit

Thermal Resistance − Junction to Ambient, PCB Mount (Note 1)

− Junction to Ambient, PCB Mount (Note 2)

RqJA

−

62.5

°C/W

1. When mounted on 1

″ square FR−4 or G−10 board (VGS = 10 V, @ 10 Seconds)

2. When mounted on minimum recommended FR−4 or G−10 board (VGS = 10 V, @ Steady State)

3. Repetitive rating; pulse width limited by maximum junction temperature.

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