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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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UD3010 датащи(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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UD3010 датащи(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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1 / 4 page  www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=30V,ID=19A,RDS(ON)<35mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(T C=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±12 V ID Continuous Drain Current-TC=25℃ 1 19 A Continuous Drain Current-TC=100℃ 12 Pulsed Drain Current 1 76 EAS Single Pulse Avalanche Energy 3 13 mJ PD Power Dissipation, TC=25℃ 20 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ D S G UD3010 |
Аналогичный номер детали - UD3010 |
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Аналогичное описание - UD3010 |
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