3DA752 datasheet(1/1 Pages) TEL

номер детали	3DA752

подробное описание детали	TO-251 Plastic-Encapsulated Transistors

PDF	1 Pages

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производитель	TEL [TRANSYS Electronics Limited]

домашняя страница	http://www.transyselectronics.com

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TO-251 Plastic-Encapsulate

d Transistors

3DA752 TRANSISTOR (NPN)

FEATURES

Power dissipation

PCM:

1.2

W (Tamb=25

℃)

Collector current

ICM:

2

A

Collector-base voltage

V(BR)CBO:

40

V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=

100µA, IE=0

40

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic=

10mA, IB=0

30

V

Emitter-base breakdown voltage

V(BR)EBO

IE=1mA, IC=0

5

V

Collector cut-off current

ICBO

VCB=40V, IE=0

0.1

µA

Emitter cut-off current

IEBO

VEB=5V, IC=0

0.1

µA

DC current gain

hFE(1)

VCE=2V, IC=500mA

100

400

VCE(sat)1

IC=2A, IB=0.2A

0.8

V

Collector-emitter saturation voltage

VCE(sat)2

IC=1.5A, IB=30mA

2

V

Transition frequency

fT

VCE=5V, IC=500mA

120

MHz

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

13

pF

CLASSIFICATION OF

hFE(1)

Rank

O

Y

G

Range

100-200

160-320

200-400

Marking

1

2

3

TO-251

1. BASE

2. COLLECTOR

3. EMITTER

Transys

Electronics

LI M ITE D

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