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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRGMC30F датащи(PDF) 2 Page - International Rectifier |
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IRGMC30F датащи(HTML) 2 Page - International Rectifier |
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2 / 8 page  2 www.irf.com IRGMC30F Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) ––– 27 54 IC = 12A Qge Gate - Emitter Charge (turn-on) ––– 4 8 nC VCC = 300V See Fig. 8 Qgc Gate - Collector Charge (turn-on) ––– 12 24 VGE = 15V td(on) Turn-On Delay Time ––– ––– 50 IC = 12A, VCC = 480V tr Rise Time ––– ––– 42 Energy losses include "tail" td(off) Turn-Off Delay Time ––– ––– 320 See Fig. 9, 10, 13 tf Fall Time ––– ––– 500 Eon Turn-On Switching Loss ––– 0.4 ––– Eoff Turn-off Switching Loss ––– 2.1 ––– Ets Total Switching Loss ––– 2.5 3.5 td(on) Turn-On Delay Time ––– 25 ––– TJ = 125°C tr Rise Time ––– 21 ––– IC = 12A, VCC = 480V td(off) Turn-Off Delay Time ––– 290 ––– VGE = 15V, RG = 7.5 Ω tf Fall Time ––– 590 ––– Energy losses include "tail" Ets Total Switching Loss ––– 4.0 ––– See Fig. 11, 13 LC+LE Total Inductance ––– 6.8 ––– nH Measured from Collector lead (6mm/ 0.25in. from package) to Emitter lead (6mm / 0.25in. from package) Cies Input Capacitance ––– 670 ––– VGE = 0V Coes Output Capacitance ––– 100 ––– pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance ––– 10 ––– ƒ = 1.0MHz Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 1.0 mA V(BR)ECS Emitter-to-Collector Breakdown Voltage 24 ––– ––– V VGE = 0V, IC = 1.0 A ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.69 ––– V/°CVGE = 0V, IC = 1.0 mA ––– ––– 2.1 IC = 12A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage ––– 2.4 ––– IC = 23A See Fig.5 ––– 2.2 ––– IC = 12A , TJ = 125°C VGE(th) Gate Threshold Voltage 3.0 ––– 5.5 VCE = VGE, IC = 250 µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -11 ––– mV/°CVCE = VGE, IC = 250 µA gfe Forward Transconductance T 6.1 ––– ––– SVCE ≥ 15V, IC = 12A ––– ––– 50 VGE = 0V, VCE = 480V ––– ––– 1000 VGE = 0V, VCE = 480V, TJ = 125°C IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ICES Zero Gate Voltage Collector Current µA Switching Characteristics @ TJ = 25°C (unless otherwise specified) V ➂ ➂ ➂ ➂ ➂ ns mJ ns mJ For footnotes refer to the last page Note: Corresponding Spice and Saber models are available on the Website. |
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