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2SC5820 датащи(PDF) 3 Page - Renesas Technology Corp

номер детали 2SC5820
подробное описание детали  Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator
PDF  11 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5820 датащи(HTML) 3 Page - Renesas Technology Corp

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2SC5820
Rev.2.00 Aug 10, 2005 page 3 of 10
Main Characteristics
0
50
100
150
200
100
Collector Power Dissipation Curve
10
100
200
0
120
Collector Current
IC (mA)
DC Current Transfer Ratio vs.
Collector Current
25
50
VCE = 2 V
00.4
0.6
1
Typical Transfer Characteristics
Typical Output Characteristics
Ambient Temperature
Ta (°C)
Collector to Emitter Voltage
VCE (V)
Base to Emitter Voltage
VBE (V)
0.2
0.8
VCE = 2 V
50
100
150
200
50
40
30
20
10
10
20
30
40
50
150
50
01
2
3
4
IB = 50 µA
100
µA
150
µA
200
µA
250
µA
300
µA
350
µA
400
µA
450
µA
500
µA
Collector to Base Voltage VCB (V)
Collector Output Capacitance vs.
Collector to Base Voltage
0.2
0.4
0.6
0.8
1.0
01
2
3
4
5
0
Emitter to Base Voltage VEB (V)
Emitter Input Capacitance vs.
Emitter to Base Voltage
0.4
0.8
1.2
1.6
2.0
-1
1
0
0
IE = 0
f = 1 MHz
IC = 0
f = 1 MHz



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