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FTK7N60PD датащи(PDF) 2 Page - First Silicon Co., Ltd

номер детали FTK7N60PD
подробное описание детали  7.0 Amps, 600 Volts N-CHANNEL MOSFET
PDF  6 Pages
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производитель  FS [First Silicon Co., Ltd]
домашняя страница  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK7N60PD датащи(HTML) 2 Page - First Silicon Co., Ltd

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Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(TC = 25˚C, unless otherwise specified)
PARAMET
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
600
V
VDSS
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 1)
IAR
7.0
A
TC = 25°C
7.0
A
Continuous Drain Current
TC = 100°C
ID
4.2
Pulsed Drain Current (Note 1)
IDM
28
A
Single Pulse(Note 2)
EAS
230
mJ
Avalanche Energy
Repetitive Limited by TJ(MAX)
EAR
14.7
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
TC = 25°C
142 / 48
W
Power Dissipation (TO-220,TO-263/ TO-220F)
Derate above 25°C
PD
1.14 / 0.38
W / ˚C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
UNIT
62.5
Junction-to-Ambient
θJA
0.88
Junction-to-Case
TO-220, TO-263
θJc
˚C / W
ELECTRICAL CHARACTERISTICS
(TC = 25˚C , unless Otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
UNIT
OFF CHARACTERISTICS
600
V
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
VDS = 600V, VGS = 0V
1
µ
A
Drain-Source Leakage Current
IDSS
VDS = 480V, TC = 125°C
10
µ
A
Forward
VGS = 30V, VDS = 0V
100
nA
Gate-Body Leakage Current
Reverse
IGSSF
VGS = -30V, VDS = 0V
-100
nA
Breakdown Voltage Temperature Coefficient ΔBVDSS / ΔTJ ID = 250
µ
A, Referenced to
25°C
0.7
V / ˚C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250µA
2.0
4.0
V
Static Drain-Source On-Resistance
RDS(ON)
VGS = 10V, ID = 3.5A
1.0
1.2
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
1000
pF
Output Capacitance
COSS
100
pF
Reverse Transfer Capacitance
CRSS
VDS = 25V, VGS = 0V,
f = 1.0MHz
10
pF
2010. 05. 18
2/6
FTK7N60P / F / DD
Revision No : 1
Junction Temperature
TJ
+150
˚C
TSTG
-55 ~ +150
˚C
MAX
Operating and Storage Temperature
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VDD = 300V, ID = 7A, RG = 25Ω
(Note 4,5)
ns
Turn-On Rise Time
tR
40
ns
Turn-Off Fall Time
tF
50
ns
Total Gate Charge
QG
30
nC
Gate-Source Charge
QGS
VDS = 480V,ID = 7A, VGS = 10V
(Note 4,5)
5
nC
Turn-Off Delay Time
Gate-Drain Charge
QGD
10
nC
tD(OFF)
MIN
TYP
MAX
Forward Transconductance
gFS
VDS = 50V, ID = 3.5A (Note 4)
6.4
S
IGSSR
20
120
ns
TO-220F
2.6
θJc



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