2SC5895 datasheet(1/2 Pages) PANASONIC

номер детали	2SC5895

подробное описание детали	Silicon NPN epitaxial planar type

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производитель	PANASONIC [Panasonic Semiconductor]

домашняя страница	http://www.panasonic.com/industrial/

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Power Transistors

1

Publication date: December 2002

SJD00299AED

2SC5895

Silicon NPN epitaxial planar type

Power supply for Audio & Visual equipments

such as TVs and VCRs

Industrial equipments such as DC-DC converters

■ Features

• High-speed switching (t

stg: storage time/tf: fall time is short)

• Low collector-emitter saturation voltage V

CE(sat)

• Superior forward current transfer ratio h

FE linearity

• TO-220D built-in: Excellent package with withstand voltage 5 kV

guaranteed

■ Absolute Maximum Ratings T

C

= 25°C

■ Electrical Characteristics T

C

= 25°C ± 3°C

1.4±0.2

1.6±0.2

0.8±0.1

0.55±0.15

2.54±0.30

5.08±0.50

12

3

2.6±0.1

2.9±0.2

4.6±0.2

φ 3.2±0.1

9.9±0.3

Unit: mm

1: Base

2: Collector

3: Emitter

TO-220D-A1 Package

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

VCEO

IC = 10 mA, IB = 060

V

Collector-base cutoff current (Emitter open)

ICBO

VCB = 60 V, IE = 0

100

µA

Collector-emitter cutoff current (Base open)

ICEO

VCE

= 60 V, I

B

= 0

100

µA

Forward current transfer ratio

hFE1

VCE = 4 V, IC = 0.2 A

60



hFE2

VCE = 4 V, IC = 1 A

80

250

hFE3

VCE

= 4 V, I

C

= 2 A

30

Collector-emitter saturation voltage

VCE(sat)

IC = 2 A, IB = 0.25 A

0.5

V

Transition frequency

fT

VCE = 10 V, IC = 0.1 A, f = 10 MHz

100

MHz

Turn-on time

ton

IC

= 1 A, Resistance loaded

0.2

µs

Storage time

tstg

IB1 = 0.1 A, IB2 = − 0.1 A

0.7

µs

Fall time

tf

VCC = 50 V

0.15

µs

Internal Connection

B

C

E

Marking Symbol: C5895

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

VCBO

60

V

Collector-emitter voltage (Base open)

VCEO

60

V

Emitter-base voltage (Collector open)

VEBO

6V

Collector current

IC

2A

Peak collector current

ICP

4A

Collector power

TC = 25°CPC

15

W

dissipation

Ta = 25°C2

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Аналогичный номер детали - 2SC5895

производитель	номер детали	датащи	подробное описание детали
Savantic, Inc.	2SC5895	205Kb / 3P	Silicon NPN Power Transistors
Quanzhou Jinmei Electro...	2SC5895	151Kb / 3P	Silicon NPN Power Transistors
Inchange Semiconductor ...	2SC5895	128Kb / 3P	Silicon NPN Power Transistors
Savantic, Inc.	2SC5895	206Kb / 3P	Silicon NPN Power Transistors
Quanzhou Jinmei Electro...	2SC5895	151Kb / 3P	Silicon NPN Power Transistors

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