Transistors

1

2SC5580

Silicon NPN epitaxial planer type

For high-frequency oscillation / switching

I Features

• High transition frequency f

T

• S-mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

I Absolute Maximum Ratings T

Parameter

Symbol

Rating

Unit

Collector to base voltage

15

V

Collector to emitter voltage

8V

Emitter to base voltage

3V

Collector current

50

mA

Collector power dissipation

150

mW

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Marking Symbol: 3R

Unit: mm

0.3

+0.1

–0.0

1

3

2

(0.65) (0.65)

0.15

+0.10

–0.05

10

°

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Emitter cutoff current

µA

Collector to base voltage

= 100 µA, I

E

= 015

V

Forward current transfer ratio

= 4 V, I

C

= 2 mA

100

350

0.6

1.5

dB

Collector to emitter saturation voltage

= 20 mA, I

B

= 4 mA

0.5

V

Transition frequency

= 5 V, I

C

= 15 mA, f = 200 MHz

0.6

1.1

GHz

Collector output capacitance

1.2

1.6

pF

I Electrical Characteristics T

1: Base

2: Emitter

EIAJ: SC-70

3: Collector

S-Mini Type Package